Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature
نویسندگان
چکیده
منابع مشابه
Synthesize of Superparamagnetic Zinc Ferrite Nanoparticles at Room Temperature
Superparamagnetic single phase zinc ferrite nanoparticles have been prepared by coprecipitation method at 20 °C without any subsequent calcination. The composition, crystallite size, microstructure and magnetic properties of the prepared nanoparticles were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), transmission electron microscope (TEM)...
متن کاملAcoustic manipulation of electron–hole pairs in GaAs at room temperature
We demonstrate the optically detected long-range (.100 mm) ambipolar transport of photogenerated electrons and holes at room temperature by surface acoustic waves ~SAWs! in ~In,Ga!As-based quantum well structures coupled to an optical microcavity. We also show the control of the propagation direction of the carriers by a switch composed of orthogonal SAW beams, which can be used as a basic cont...
متن کاملRoom-temperature continuous-wave 1.55 lm GaInNAsSb laser on GaAs
Introduction: The proposal by Kondow and co-workers [1] of GaInNAs active regions for temperature insensitive GaAs-based lasers has led to significant success in the 1.3 mm regime, and performance currently exceeds that of competing InP-based devices. This effort has yielded InGaAs=GaAs lasers that emit out to 1.25 mm with exceedingly lowthreshold current densities [2], and emission has been ex...
متن کاملRoom-temperature spin injection from Fe into GaAs.
Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.
متن کاملRoom temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1991
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.79.349